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NTHL045N065SC1 Silicon Carbide (SiC) MOSFET onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge.
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NTHL045N065SC1 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/18 V, ISD = 25 A, dIS/dt = 1000 A/ s − 19 − ns Reverse Recovery Charge QRR − 99 − nC
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NTHL045N065SC1 onsemi MOSFET SIC MOS TO247-3L 650V datasheet, inventory, & pricing. Skip to Main Content (800) 346-6873. Contact Mouser (Kitchener) (800) 346-6873 | Feedback. Change Location. English. Français; CAD $ CAD $ USD Canada. Please confirm your currency selection: Canadian Dollars
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NTHL045N065SC1 3 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/18 V, ISD = 25 A, dIS/dt = 1000 A/ s − 19 − ns Reverse Recovery Charge QRR − …
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NTHL045N065SC1. Features. Typ. RDS(on) = 32 m @ VGS = 18 V Typ. RDS(on) = 42 m @ VGS = 15 V. Ultra Low Gate Charge (QG(tot) = 105 nC) High Speed Switching with …
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Free shipping on most orders over $60 (SGD) Continue Shopping View Basket. * Your basket contains errors. Do not show again and take me directly to the Basket. NTH4L045N065SC1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L datasheet, inventory & pricing.
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NTHL045N065SC1 3 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/18 V, ISD = 25 A, dIS/dt = 1000 A/ s − 19 − ns Reverse Recovery Charge QRR − …
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NTHL045N065SC1 onsemi MOSFET SIC MOS TO247-3L 650V datasheet, inventory & pricing. Skip to Main Content +60 4 2991302. Contact Mouser (Malaysia) +60 4 2991302 | Feedback. Change Location English MYR. RM MYR $ USD Malaysia. Please confirm your currency selection: Ringgits Incoterms:FCA (Shipping Point)
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Silicon Carbide SiC MOSFET - 32 mohm, 650 V, M2, TO-247-3L, NTHL045N065SC1 Datasheet, NTHL045N065SC1 circuit, NTHL045N065SC1 data sheet : ONSEMI, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
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ADAS and Automation Systems enable modern vehicles to become semi-autonomous with increased safety, minimizing fatalities and injuries.. Learn more about our holistic sensing capabilities to help you design safer systems that drive towards a higher level of autonomy.
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onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The NTHL045N065SC1 MOSFET features high …
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onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized...
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Order today, ships today. NTHL045N065SC1 – N-Channel 650 V 66A (Tc) 291W (Tc) Through Hole TO-247-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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NTHL045N065SC1. 1 cart items. Signal Conditioning & Control Sensors Custom & ASSP Interfaces Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules …
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NTHL045N065SC1 onsemi MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L datasheet, inventory & pricing. Skip to Main Content +39 02 57506571
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Part No. NTHL045N065SC1 Download NTHL045N065SC1Click to view File Size 278.79 Kbytes Page 8 Pages Manufacturer ONSEMI [ON Semiconductor] Direct Link …
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Transistor MOSFET N‐Channel 650V 66A 3-Pin TO-247 Tube (Alt: NTHL045N065SC1) RoHS: Compliant Min Qty: 30 Package Multiple: 30 108 3000 €17.2959
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NTHL045N065SC1 Silicon Carbide (SiC) MOSFET onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge.
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NVH4L045N065SC1. 1 cart items. Custom & ASSP Wireless Connectivity. Silicon Carbide (SiC) MOSFETs Power Modules Protected MOSFETs Rectifiers Audio Transistors Darlington Transistors ESD Protection Diodes Digital Transistors (BRTs) JFETs Small Signal Switching Diodes Zener Diodes RF Transistors RF Diodes IGBTs. Ethernet …
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NVHL045N065SC1 4 TYPICAL CHARACTERISTICS 15 V Figure 1. On−Region Characteristics Figure 2.Normalized On−Resistance vs. Drain Current and …
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,。. onsemi NTHL045N065SC1 – N 650 V 66A（Tc） 291W（Tc） TO-247-3。. Digi-Key Electronics …
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onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon.
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