II-VI Incorporated Accelerates Investment in Silicon Carbide …

Details the previously announced $1 billion investment in silicon carbide (SiC) over the next 10 yearsPennsylvania site's annual output of 150 mm and 200 mm SiC substrates to reach the ...

1200 V Dual Silicon Carbide Power Module | Coherent Corp.

Low stray inductance (1 nH) SiC die qualified to +200 °C. Ultra-low switching losses over entire operating range. Body diode with minimal reverse recovery. Integrated temperature sensing. Dedicated DESAT Pin and Source- Kelvin Pin. AlSiC Baseplate and Si3N4 AMB Substrate. Share This.

SiC Epitaxy Wafer | Coherent Corp.

Coherent produces SiC epitaxy on up to 200 mm wafers with best-in-class uniformity. We offer a complete SiC materials solution with flexible specifications with the following capabilities: Thick epilayers with or …

II-VI خرید Ascatron و INNOViON برای تشکیل پلت فرم الکترونیک قدرت SiC به

اخبار: میکروالکترونیک

II-VI Incorporated Qualifies its 1200 V Silicon Carbide …

II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it has qualified its 1200 V silicon carbide MOSFET platform, on its high-quality SiC substrates, to stringent automotive standard requirements and is expanding its relationship with GE by signing a three-year technology access agreement (TAA) with …

II-VI Incorporated Expands Silicon Carbide …

PITTSBURGH, April 15, 2021 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced that it has expanded its silicon carbide...

SILICON CARBIDE (SiC) SUBSTRATES

Additional Key Properties of II-VI Advanced Materials SiC Substrates (typical values*) Parameter Polytype Dopant Resistivity Orientation FWHM Roughness, Ra** Dislocation density Micropipe density N-type 4H Nitrogen ~0.02 Ohm-cm 4° off-axis < 20 arc-sec <5Å ~ 3·103 cm-2 < 0.1 cm -2 Semi-insulating 4H, 6H Vanadium > 10 11 Ohm-cm On-axis < 25 ...

II-VI to aim at the Automotive market with Silicon Carbide …

II-VI also announced a large-scale investment in SiC. On the 10th, II-VI announced its investment of $1 billion (about KRW 1.16 trillion) in SiC over the next 10 years. The company plans to increase its SiC wafer production capacity 6-7 times within 5 years. The strategy is to stabilize the price of SiC products by increasing production.

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II-VI Incorporated to Acquire Ascatron and INNOViON's …

II-VI Incorporated is a manufacturer of high-power semiconductor laser components, including other optoelectronic devices, laser systems, component and processing tools, epitaxial wafers, silicon carbide (SiC) substrates and more.. Recently, the company announced that it has agreed to buy all outstanding shares of Ascatron AB, an …

SiC Power Devices and Modules | Coherent Corp.

Coherent Silicon Carbide MOSFETs offer superior energy efficiency and performance over existing silicon technologies. Our devices offer 200 °C junction temperature capability along with industry leading avalanche ratings and superior specific on-resistance over full temperature range. These devices enable higher switching frequencies that ...

II-VI Incorporated Closes $100 Million Contract to Supply …

To meet the market demand in Asia, II-VI established in 2021 a backend processing line for SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI's Asia Regional Headquarters in Fuzhou, China. Tianyu will benefit from II-VI's 150 mm SiC global production capacity in both the U.S. and in China.

II-VI Incorporated completes the acquisition of Coherent, …

II-VI Incorporated, a global leader in engineered materials and optoelectronic components, is a vertically integrated manufacturing company that develops innovative products for diversified applications in communications, industrial, aerospace & defense, semiconductor capital equipment, life sciences, consumer electronics, and automotive ...

II-VI accelerates 150-200mm SiC substrate and epi …

News: Suppliers 8 March 2022. II-VI accelerates 150-200mm SiC substrate and epi manufacturing expansion. As part of its previously announced $1bn investment in silicon carbide (SiC) over the next 10 years, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA is accelerating its investment in …

- . 375 SAXONBURG BLVD SAXONBURG, PA 16056 UNITED STATES T. +1 888-558-1504 F. +1 724-352-4980 [email protected]

II-VI completes Ascatron and INNOViON acquisitions, and …

News: Suppliers 6 October 2020. II-VI completes Ascatron and INNOViON acquisitions, and joins SIA. Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – says that Sohail Khan has joined it as executive VP of New Ventures & Wide-Bandgap Electronics Technologies.

II-VI expands conductive SiC wafer finishing capacity in China

The backend SiC wafer processing performed at II-VI's new SiC facility in Fuzhou includes edge grinding, chemical-mechanical polishing (CMP), cleaning and inspection, all performed in Class 100 and 1000 cleanrooms. The facility is part of II-VI's already announced plan to ramp its SiC substrate manufacturing capacity by 5-10 times …

II-VI expands conductive SiC wafer finishing capacity in China

II-VI expands conductive SiC wafer finishing capacity in China Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA has …

II-VI to supply Infineon with silicon carbide substrates for …

II-VI and Infineon will also collaborate in the transition to 200 mm SiC substrates. II-VI announced in March 2022 that it is accelerating its investment in 150 mm and 200 mm SiC substrate ...

Silicon Carbide Substrates Capabilities | Coherent Corp.

Silicon Carbide Substrates Capabilities. Coherent manufactures and markets high quality single crystal SiC substrates for use in the wireless infrastructure, RF electronics and power switching industries. We continually make significant investments in research and development that ensure our crystal growth technology and wafer manufacturing ...

Financial Press Releases | Coherent

February 8, 2023. Coherent Corp. Reports Fiscal 2023 First Quarter Results. November 9, 2022 View Fiscal 2023 Q1 Results. II-VI Changes Name to Coherent and Launches New Brand Identity. September 8, 2022. II-VI Incorporated Reports Q4 and Full-Year Fiscal 2022 Results. August 24, 2022 View Fiscal 2022 Full Year Results.

Silicon Carbide (SiC) Substrates for RF Electronics

The key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation, and increased bandwidth capability. ... October 10, 2019: II-VI Incorporated Unveils the World's First 200 mm Semi-Insulating SiC Substrates for RF Power Amplifiers in 5G Antennas. Product Details Datasheet and Documents

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Contact Us | Coherent Corp.

United States 375 SAXONBURG BLVD SAXONBURG, PA 16056 UNITED STATES T. +1 888-558-1504 [email protected]

About Us | Coherent Corp.

About Us. Coherent empowers market innovators to define the future through breakthrough technologies, from materials to systems. We deliver innovations that resonate with our customers in diversified applications for the industrial, communications, electronics, and instrumentation markets. Headquartered in Saxonburg, Pennsylvania, Coherent has ...

Wide-Bandgap Electronics | Coherent Corp.

Wide-Bandgap Electronics. Coherent leverages its world-class 150 mm and 200 mm Silicon Carbide technology platforms for a new era in power electronics. Coherent provides power electronics solutions ranging from SiC substrates, to epitaxial wafers, devices, and modules. These state-of-the-art products enable power converters with unrivaled ...

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II-VI Incorporated Closes $100 Million Contract to Supply …

To meet the market demand in Asia, II-VI established in 2021 a backend processing line for SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI's Asia Regional Headquarters in ...

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II-VI Incorporated Accelerates Investment in Silicon …

II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it is accelerating its investment in 150 mm and 200 mm silicon …

Products Main | Coherent Corp.

HPL Bars & Stacks. HPL SE Pumps & Seeds. GaAs Optoelectronics. InP Optoelectronics. Lasers for Sensing. GaAs Electronic Devices.

II-VI to aim at the Automotive market with Silicon …

II-VI also announced a large-scale investment in SiC. On the 10th, II-VI announced its investment of $1 billion (about KRW 1.16 trillion) in SiC over the next 10 years. The company plans to increase its SiC wafer …

II-VI Incorporated Expands Silicon Carbide …

The backend SiC wafer processing performed at II-VI's new SiC facility in Fuzhou includes edge grinding, chemical-mechanical polishing, cleaning, and inspection, …