- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
The circuit uses only two high-voltage switches synthesized by means of the 10 kV SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The design …
به خواندن ادامه دهید
High-density packaging of high-voltage semiconductors, such as 10 kV silicon-carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFETs), has the added challenge of maintaining low electric field …
به خواندن ادامه دهید
The circuit uses only two high-voltage switches synthesized by means of the 10 kV SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor). ... notably the 10kV SiC MOSFETs and diodes, as presented in Section 3. The experimental setup, performance analysis, notably through a power balance, and results are discussed in …
به خواندن ادامه دهید
The selected power module for the design is the SiC MOSFET CAS100H12AM1 from Cree, rated at 1200 V and 100 A. However, the design can be easily adapted for other modules as it is presented in, where the gate driver is used in a railway converter with a 1700 V and 225 A full-SiC Wolfspeed CAS300M17BM2 device. Firstly, …
به خواندن ادامه دهید
To our knowledge, this 15 kV SiC MOSFET is the highest voltage rated unipolar power switch. Compared to the commercial 6.5 kV Silicon (Si) IGBTs, these 10 kV and 15 kV SiC MOSFETs exhibit extremely low switching losses even when they are switched at 2-3× higher voltage. The benefits of using these 10 kV and 15 kV SiC MOSFETs include ...
به خواندن ادامه دهید
In [45], a novel 10 kV, 60 A all SiC power module prototype was manufactured using third Generation Wolfspeed 350 mΩ SiC MOSFETs. Pressure-assisted sintering was used for the die atachment …
به خواندن ادامه دهید
Gen3 10kV/350mOhm SiC MOSFET: Bare die: $750 each: 10kV/15A SiC JBS diode. $300 each. Quant. Part Number: Description: Package: COST: Data Sheet 2: 100: XPW3-10000-Z015B: 10kV/15A SiC JBS diode: Bare die: $300 each: Pages. Contact Us; Engineering Samples Device Bank; FAQ Sheet; Home; PowerAmerica Device Use Agreements;
به خواندن ادامه دهید
Fig. 11. Basic functional diagram of a gate driver for a power MOSFET. .....24 Fig. 12. The implementation of desat protection for SiC MOSFETs [50].....31 Fig. 13. Circuit diagram of DPT for diode reverse recovery characterization. .....36 Fig. 14. Discrete 10 kV SiC MOSFET in the half bridge phase leg (left) and its
به خواندن ادامه دهید
This paper reports a comprehensive analysis of three phase converter enabled by 10kV SiC based XHV-6 modules. A thorough explanation of converter based upon 10kV XHV-6 module has been carried out. The gate driver and converter structure used for carrying out the test have been explained in details. The assessment of MOSFET modules have …
به خواندن ادامه دهید
98%efficiency. 1.5kW/dm3power. Single-stage SST concept 10kV SiC. Handling MV with SiC. Single-stageMulti-cellModular. Single-Stage vs. Multi-Cell. LV vs. MV …
به خواندن ادامه دهید
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are key devices for next-generation power electronics. However, accurate determination of device parameters from ...
به خواندن ادامه دهید
Characterization, Modeling, and Application of 10-kV SiC MOSFET. Abstract: Ten-kilovolt SiC MOSFETs are currently under development by a number of …
به خواندن ادامه دهید
A DC/DC boost converter based on a 10 kV 10 A SiC MOSFET and a 10 kV 5A Junction Barrier Schottky (JBS) diode is designed and tested for continuous …
به خواندن ادامه دهید
10-kV SiC MOSFET in Solid-State Transformer application Gangyao Wang Xing Huang, Jun Wang, Tiefu Zhao, Subhashish Bhattacharya, Alex Q. Huang ... n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications Sachin Madhusoodhan an Kamalesh Hatua, Subhashish Bhattacharya, Scott Leslie, Sei-
به خواندن ادامه دهید
Therefore, this paper proposes a 10kV SiC MOSFET-based single-cell two-stage 25kW, 3:8kV single-phase AC to 400V DC SST (cf. Fig. 1) and provides a detailed analysis and experimental verification of the isolated 7kV to 400V DC/DC converter stage. The associated soft-switching 3:8kV AC to 7kV DC PFC converter has been presented in [1] and
به خواندن ادامه دهید
For power metal-oxide-semiconductor field-effect-transistors (MOSFETs), there are two current paths in the 3rd-quad conduction, namely the MOS channel path and the body diode path. It is well known that, for 1.2 kV silicon carbide (SiC) planar MOSFETs, the conduction loss in the 3rd-quad is reduced by turning on the MOS channel with a positive ...
به خواندن ادامه دهید
The emergence of medium-voltage silicon carbide (SiC) power semiconductor devices, in ranges of 10–15 kV, has led to the development of simple two-level converter systems for medium-voltage applications. A medium-voltage mobile utility support equipment-based three-phase solid state transformer (MUSE-SST) system, based on Gen3 10 kV SiC …
به خواندن ادامه دهید
3.3-kV SiC MOSFET with monolithically integrated MPS diode. ... "A MV intelligent gate driver for 15kV SiC IGBT and 10kV SiC MOSFET." 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 2076–2082. 4 Marzoughi et al. (October 2017). "Characterization and Evaluation of the State-of-the-Art 3.3-kV 400-A …
به خواندن ادامه دهید
The main advantage of 4H-SiC power MOSFETs is their fast, low loss, temperature independent switching perfor-mance. Figure 5 shows the switching characteristics of the 15kV, 10A 4H-SiC MOSFET. A low capacitance, high saturation current, air-core 14mH inductor was used as the load. Two 10kV SiC JBS diodes connected in series were
به خواندن ادامه دهید
Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Silicon-based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) Power MOSFET offers a series of advantages. CoolSiC™ MOSFET …
به خواندن ادامه دهید
16 16 18 20 8.1 mm • Very Small Difference in On-Resistance (RDS,on) at 150 C • Enhanced Short Circuit 10 kV SiC MOSFET has Higher Threshold Voltage Measured I-V Characteristics at 150 C of Enhanced Short Circuit Capability and Baseline Gen3 10 kV/350 mOhm SiC MOSFETs 16 18 20 Enhanced Short Circuit Gen3
به خواندن ادامه دهید
This paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices, including the MOSFET, BJT, SJT, and normally-on and normally-off JFET.
به خواندن ادامه دهید
•Boost-buck at 3.75kW for 30 min - Switching test of 10kV SiC MOSFET at 5kV •Boost input is 1.25kV and output is 5kV. The boost duty is 25% • 30 min thermal run at 5kV and 3.75 …
به خواندن ادامه دهید
This article presents the design and testing of a 10-kV SiC mosfet power module that switches at a record 250 V/ns without compromising the signal and ground …
به خواندن ادامه دهید
Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities ... (SiC) MOSFET stack consisting of series connected low‐voltage devices ...
به خواندن ادامه دهید
@article{osti_1430604, title = {Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET}, author = {Ji, Shiqi and Zheng, Sheng and Wang, Fei and Tolbert, Leon M.}, abstractNote = {The temperature-dependent characteristics of the third-generation 10 …
به خواندن ادامه دهید
Figure 7 shows a 3-level SiC implementation with 10KV switches. Clearly, the SiC implementation goes a long way to simplifying the architecture and control of such a DC-AC converter and can be operated at relatively high frequencies. ... (ON) of the low voltage MOSFET. Conclusions. SiC devices are excellent candidates to improve power ...
به خواندن ادامه دهید
Wolfspeed's 900 V silicon carbide MOSFETs for switching power devices enable smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. These MOSFETs are optimized for high-frequency power electronics applications, including renewable energy inverters, electric vehicle charging …
به خواندن ادامه دهید
CPES-380V-12V LLC. _Lumia. 1919 1. CPES-10kV SiC MOSFET. _Lumia. 221 0. CPES- PCB 、 1.2 kV SiC . _Lumia. 297 0.
به خواندن ادامه دهید
Phase II is developing 100 A, 10 kV SiC power modules – Phase III goal is 13.8 kV 2.7 MVA Solid State Power Substation • Circuit simulation used to – Optimize SiC module and system – Evaluate impact of new technology on grid power converters • SECA goal of $40-$100 / kW for the fuel cell plant – High-Voltage grid-connected inverter ...
به خواندن ادامه دهید
10kV, 10A SiC MOSFET DC bus capacitor bank Inductor (6.9mH) (b) Fig. 4: Photograph of (a) 10kV, 10A 4H-SiC MOSFET die in a package without isolated base plate, and (b) the UIS test hardware setup. IV. EXPERIMENTAL RESULTS Fig. 4(a) shows the photograph of the 10kV SiC MOSFET. Its package does not have isolated base plate,
به خواندن ادامه دهید
2. Device Simulation Setup. A schematic cross sectional view of the simulated 4H-SiC based MOSFET device along with the net doping profile is shown in Figure 2.For simplicity, only left half of the device with horizontal dimension of 4 m is simulated with a channel length of 0.8 m. A drift layer thickness of 25 m with a doping …
به خواندن ادامه دهید